Thermal Oxidation of Silicon: Modeling and Experiment
Brendan Palmer, Devin Krause, Iulian Gherasoiu
Semiconductor Microfabrication Project, Engineering Technology, College of Engineering, SUNY Polytechnic Institute, Utica, NY, USA
Silicon (Si) is at the basis of the semiconductor industry due to its physical properties and abundance in nature. However, its success as a semiconductor material is only possible due to the outstanding electrical and chemical properties of its oxide, SiO2. This project analyzes SiO2 film formation through growth modeling and experimentation with a thermally processed silicon wafer.